High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration
Identifieur interne : 014273 ( Main/Repository ); précédent : 014272; suivant : 014274High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration
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Abstract
We report the structural properties of InGaN/GaN/AlGaN multiple quantum wells (MQWs) by means of two-dimensional reciprocal space mapping (RSM) of high resolution x-ray diffraction. The influence of Si doping in GaN barriers on the characteristics has been studied for 12-period MQWs grown by metalorganic chemical vapor deposition, which have different Si doping concentrations in the GaN barriers ranging from 1×1017 to 3×1019cm-3. Information on the structural quality of these MQWs was extracted from the linewidth broadening of the higher-order superlattice satellite peaks, as well as from the presence of Pendellosung oscillations. The measured diffraction curves were modeled using kinematic diffraction theory. From the symmetric and asymmetric RSMs around (0002), (0004) and (1124) reflections, we found that the InGaN/GaN/AlGaN MQWs are grown coherently on the GaN base layer. Better interface properties are achieved with Si doping. Our results indicate that Si doping in the GaN barriers affects the interface quality of the InGaN/GaN MQW systems, and thus, also influences the optical properties. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration</title><author><name sortKey="Cho, Yong Hoon" uniqKey="Cho Y">Yong-Hoon Cho</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Fedler, F" uniqKey="Fedler F">F. Fedler</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Hauenstein, R J" uniqKey="Hauenstein R">R. J. Hauenstein</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Park, G H" uniqKey="Park G">G. H. Park</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Song, J J" uniqKey="Song J">J. J. Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Keller, S" uniqKey="Keller S">S. Keller</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Mishra, U K" uniqKey="Mishra U">U. K. Mishra</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Denbaars, S P" uniqKey="Denbaars S">S. P. Denbaars</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0099200</idno><date when="1999-03-01">1999-03-01</date><idno type="stanalyst">PASCAL 99-0099200 AIP</idno><idno type="RBID">Pascal:99-0099200</idno><idno type="wicri:Area/Main/Corpus">015944</idno><idno type="wicri:Area/Main/Repository">014273</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doping profiles</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor quantum wells</term><term>Silicon</term><term>Wide band gap semiconductors</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6172S</term><term>6855L</term><term>7340K</term><term>7361E</term><term>7866F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Silicium</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Profil dopage</term><term>Diffraction RX</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the structural properties of InGaN/GaN/AlGaN multiple quantum wells (MQWs) by means of two-dimensional reciprocal space mapping (RSM) of high resolution x-ray diffraction. The influence of Si doping in GaN barriers on the characteristics has been studied for 12-period MQWs grown by metalorganic chemical vapor deposition, which have different Si doping concentrations in the GaN barriers ranging from 1×10<sup>17</sup> to 3×10<sup>19</sup>cm<sup>-3</sup>. Information on the structural quality of these MQWs was extracted from the linewidth broadening of the higher-order superlattice satellite peaks, as well as from the presence of Pendellosung oscillations. The measured diffraction curves were modeled using kinematic diffraction theory. From the symmetric and asymmetric RSMs around (0002), (0004) and (1124) reflections, we found that the InGaN/GaN/AlGaN MQWs are grown coherently on the GaN base layer. Better interface properties are achieved with Si doping. Our results indicate that Si doping in the GaN barriers affects the interface quality of the InGaN/GaN MQW systems, and thus, also influences the optical properties. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>85</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration</s1></fA08><fA11 i1="01" i2="1"><s1>CHO (Yong-Hoon)</s1></fA11><fA11 i1="02" i2="1"><s1>FEDLER (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>HAUENSTEIN (R. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>PARK (G. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>SONG (J. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>KELLER (S.)</s1></fA11><fA11 i1="07" i2="1"><s1>MISHRA (U. K.)</s1></fA11><fA11 i1="08" i2="1"><s1>DENBAARS (S. P.)</s1></fA11><fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>3006-3008</s1></fA20><fA21><s1>1999-03-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0099200</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the structural properties of InGaN/GaN/AlGaN multiple quantum wells (MQWs) by means of two-dimensional reciprocal space mapping (RSM) of high resolution x-ray diffraction. The influence of Si doping in GaN barriers on the characteristics has been studied for 12-period MQWs grown by metalorganic chemical vapor deposition, which have different Si doping concentrations in the GaN barriers ranging from 1×10<sup>17</sup> to 3×10<sup>19</sup>cm<sup>-3</sup>. Information on the structural quality of these MQWs was extracted from the linewidth broadening of the higher-order superlattice satellite peaks, as well as from the presence of Pendellosung oscillations. The measured diffraction curves were modeled using kinematic diffraction theory. From the symmetric and asymmetric RSMs around (0002), (0004) and (1124) reflections, we found that the InGaN/GaN/AlGaN MQWs are grown coherently on the GaN base layer. Better interface properties are achieved with Si doping. Our results indicate that Si doping in the GaN barriers affects the interface quality of the InGaN/GaN MQW systems, and thus, also influences the optical properties. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60A72S</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55L</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C40K</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="05" i2="3"><s0>001B70H66F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6172S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6855L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7340K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Profil dopage</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Doping profiles</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>XRD</s0></fC03><fN21><s1>053</s1></fN21><fN47 i1="01" i2="1"><s0>9907M000200</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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